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Proceedings Paper

Magnetic doping of Ge-quantum dots: growth studies exploring the feasibility of modulating QD properties
Author(s): Christopher A. Nolph; Kiril R. Simov; Gopalakrishnan Ramalingam; Petra Reinke
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Paper Abstract

The magnetic doping of Ge-QDs is highly coveted and has been pursued for several years. The Ge- Mn-Si substrate system presents a complex challenge, and the competition between dopant integration and formation of silicides, germanides and metastable phases makes the magnetic doping a considerable, and maybe insurmountable challenge. We will discuss the interaction of Mn with all growth surface, Si(100), Ge(100) wetting layer, and Ge{105} QD facet, as well as the co-deposition of Mn and Ge. The monoatomic Mn-wires, which form on Si(100), and their magnetic signatures allow unique insight into the relation between bonding and magnetism. We will close with an outlook on the feasibility of QD manipulation by controlling dopant-surface interactions.

Paper Details

Date Published: 16 September 2014
PDF: 10 pages
Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 91740O (16 September 2014); doi: 10.1117/12.2062487
Show Author Affiliations
Christopher A. Nolph, Univ. of Virginia (United States)
Kiril R. Simov, Univ. of Virginia (United States)
Gopalakrishnan Ramalingam, Univ. of Virginia (United States)
Petra Reinke, Univ. of Virginia (United States)


Published in SPIE Proceedings Vol. 9174:
Nanoepitaxy: Materials and Devices VI
Nobuhiko P. Kobayashi; A. Alec Talin; Albert V. Davydov; M. Saif Islam, Editor(s)

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