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Proceedings Paper

Frequency tunable photo-impedance sensor
Author(s): Tanuj Saxena; Sergey Rumyantsev; Partha Dutta; Michael Shur
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Paper Abstract

We report on a transparent gate silicon MOS photo-impedance sensor, where a gated light sensitive semiconductor layer connects fixed capacitances. The resistance of the semiconductor and the capacitance of the MOS structure change with illumination. The frequency dispersion makes the coupling of these capacitances sensitive to light intensity extending the sensor dynamic range and tuning the sensitivity of the sensor. Our modeling results demonstrate advantages of this novel sensor in terms of sensitivity and dynamic range. The design and concept of this device could be extended to many other semiconductor materials, where frequency dispersion is related either to traps, or embedded nanoparticles or carrier generation processes.

Paper Details

Date Published: 7 October 2014
PDF: 8 pages
Proc. SPIE 9220, Infrared Sensors, Devices, and Applications IV, 92200N (7 October 2014); doi: 10.1117/12.2062457
Show Author Affiliations
Tanuj Saxena, Rensselaer Polytechnic Institute (United States)
Sergey Rumyantsev, Rensselaer Polytechnic Institute (United States)
Partha Dutta, Rensselaer Polytechnic Institute (United States)
Michael Shur, Rensselaer Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 9220:
Infrared Sensors, Devices, and Applications IV
Paul D. LeVan; Ashok K. Sood; Priyalal Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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