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Proceedings Paper

In-situ stress study on WSi2/Si multilayers
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Paper Abstract

Stress in multilayer Laue lenses can be reduced by choosing unequal thicknesses for the two layers comprising a bilayer in the zone plate structure. We demonstrate this with the wafer curvature measured in-operando for sputter deposition of WSi2/Si bilayers. The curvature measurements showed that the compressive stress built in the multilayers during the deposition process bent the substrate wafers where these multilayers were coated onto it. Within equal thickness WSi2/Si bilayers, the Si layers contribute more compressive stress than the WSi2 layers at a 4 mTorr Argon environment. Reducing the ratio of Si’s thickness in the WSi2/Si bilayer decreased the total stress.

Paper Details

Date Published: 5 September 2014
PDF: 5 pages
Proc. SPIE 9207, Advances in X-Ray/EUV Optics and Components IX, 920708 (5 September 2014); doi: 10.1117/12.2061869
Show Author Affiliations
Bing Shi, Argonne National Lab. (United States)
Albert T. Macrander, Argonne National Lab. (United States)
Jörg Maser, Argonne National Lab. (United States)
Raymond Conley, Argonne National Lab. (United States)
Lahsen Assoufid, Argonne National Lab. (United States)


Published in SPIE Proceedings Vol. 9207:
Advances in X-Ray/EUV Optics and Components IX
Christian Morawe; Ali M. Khounsary; Shunji Goto, Editor(s)

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