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Proceedings Paper

Strong exciton-plasmon coupling in graphene-semiconductor structures
Author(s): Kirill A. Velizhanin; Tigran V. Shahbazyan
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Paper Abstract

We study strong coupling between plasmons in monolayer charge-doped graphene and excitons in a narrow gap semiconductor quantum well separated from graphene by a potential barrier. We show that the Coulomb interaction between excitons and plasmons result in mixed states described by a Hamiltonian similar to that for exciton-polaritons and derive the exciton-plasmon coupling constant that depends on system parameters. We calculate numerically the Rabi splitting of exciton-plasmariton dispersion branches for several semiconductor materials and find that it can reach values of up to 50 - 100 meV.

Paper Details

Date Published: 17 August 2014
PDF: 15 pages
Proc. SPIE 9163, Plasmonics: Metallic Nanostructures and Their Optical Properties XII, 91630F (17 August 2014); doi: 10.1117/12.2061484
Show Author Affiliations
Kirill A. Velizhanin, Los Alamos National Lab. (United States)
Tigran V. Shahbazyan, Jackson State Univ. (United States)


Published in SPIE Proceedings Vol. 9163:
Plasmonics: Metallic Nanostructures and Their Optical Properties XII
Allan D. Boardman, Editor(s)

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