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Proceedings Paper

Influence of substrates on formation of polycrystalline silicon nanowire films
Author(s): Shinya Kato; Tatsuya Yamazaki; Shinsuke Miyajima; Makoto Konagai
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Paper Abstract

Polycrystalline silicon nanowires (poly-SiNWs) films were successfully prepared by using metal assisted chemical etching of polycrystalline silicon (poly-Si) films. The poly-Si films were prepared by solid-phase crystallization of amorphous silicon (a-Si) deposited by different deposition techniques on different substrates. In the case of the electron beam evaporated a-Si on a quartz substrate, the formation of poly-SiNWs was not observed and the structure was found to be porous silicon. On the other hand, poly-SiNWs successfully formed from poly-Si on a silicon substrate. We also found that deposition techniques for a-Si films affect the formation of poly-SiNWs.

Paper Details

Date Published: 7 October 2014
PDF: 6 pages
Proc. SPIE 9178, Next Generation Technologies for Solar Energy Conversion V, 91780M (7 October 2014); doi: 10.1117/12.2061471
Show Author Affiliations
Shinya Kato, Japan Science and Technology Agency (Japan)
Tatsuya Yamazaki, Tokyo Institute of Technology (Japan)
Shinsuke Miyajima, Tokyo Institute of Technology (Japan)
Makoto Konagai, Japan Science and Technology Agency (Japan)
Tokyo Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 9178:
Next Generation Technologies for Solar Energy Conversion V
Oleg V. Sulima; Gavin Conibeer, Editor(s)

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