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Proceedings Paper

Fabrication and characterization of epitaxial 4H-SiC pn junctions
Author(s): Andrzej Kociubinski; Mariusz Duk; Dominika Teklinska; Norbert Kwietniewski; Mariusz Sochacki; Michal Borecki
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Paper Abstract

This paper provides an overview of the process of 4H-SiC pn junction fabrication and characterization. The samples used in this study were fabricated in a resistively heated horizontal hot-wall Chemical Vapor Deposition reactor. The homo-epitaxial layers were grown on commercially available 4H-SiC substrates (Cree). In order to obtain p-type epilayers, they were intentionally doped with aluminum. In this work, we present our recently developed 4H-SiC pn junctions fabrication and characterization results. The ohmic contacts were formed using evaporation, etching, lift-off and high temperature annealing. Current-voltage characteristics of the devices were demonstrated.

Paper Details

Date Published: 12 May 2014
PDF: 6 pages
Proc. SPIE 9228, Optical Fibers and Their Applications 2014, 922804 (12 May 2014); doi: 10.1117/12.2061287
Show Author Affiliations
Andrzej Kociubinski, Lublin Univ. of Technology (Poland)
Mariusz Duk, Lublin Univ. of Technology (Poland)
Dominika Teklinska, Institute of Electronic Materials Technology (Poland)
Norbert Kwietniewski, Warsaw Univ. of Technology (Poland)
Mariusz Sochacki, Warsaw Univ. of Technology (Poland)
Michal Borecki, Warsaw Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 9228:
Optical Fibers and Their Applications 2014
Jan Dorosz; Ryszard S. Romaniuk, Editor(s)

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