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Proceedings Paper

High-sensitivity silicon nanowire phototransistors
Author(s): Siew Li Tan; Xingyan Zhao; Yaping Dan
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Paper Abstract

Silicon nanowires (SiNWs) have emerged as a promising material for high-sensitivity photodetection in the UV, visible and near-infrared spectral ranges. In this work, we demonstrate novel planar SiNW phototransistors on silicon-oninsulator (SOI) substrate using CMOS-compatible processes. The device consists of a bipolar transistor structure with an optically-injected base region. The electronic and optical properties of the SiNW phototransistors are investigated. Preliminary simulation and experimental results show that nanowire geometry, doping densities and surface states have considerable effects on the device performance, and that a device with optimized parameters can potentially outperform conventional Si photodetectors.

Paper Details

Date Published: 28 August 2014
PDF: 8 pages
Proc. SPIE 9170, Nanoengineering: Fabrication, Properties, Optics, and Devices XI, 917002 (28 August 2014); doi: 10.1117/12.2061190
Show Author Affiliations
Siew Li Tan, Univ. of Michigan-Shanghai Jiao Tong Univ. Joint Institute (China)
Xingyan Zhao, Univ. of Michigan-Shanghai Jiao Tong Univ. Joint Institute (China)
Yaping Dan, Univ. of Michigan-Shanghai Jiao Tong Univ. Joint Institute (China)


Published in SPIE Proceedings Vol. 9170:
Nanoengineering: Fabrication, Properties, Optics, and Devices XI
Eva M. Campo; Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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