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Proceedings Paper

Organic field-effect transistor circuits with electrode interconnections using reverse stamping
Author(s): Sangmoo Choi; Canek Fuentes-Hernandez; Minseong Yun; Amir Dindar; Talha M. Khan; Cheng-Yin Wang; Bernard Kippelen
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Paper Abstract

We discuss a non-vacuum low-cost reverse stamping method for the realization of circuits based on top-gate organic field-effect transistors (OFETs) with a bi-layer gate dielectric. This method allows for patterning of high-k inorganic dielectric films produced by atomic layer deposition and consequently of the bilayer gate dielectric layers used in our top-gate OFETs. We demonstrate the fabrication and operation of logic inverters and ring oscillators following this approach.

Paper Details

Date Published: 7 October 2014
PDF: 6 pages
Proc. SPIE 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII, 918511 (7 October 2014); doi: 10.1117/12.2060602
Show Author Affiliations
Sangmoo Choi, Georgia Institute of Technology (United States)
Canek Fuentes-Hernandez, Georgia Institute of Technology (United States)
Minseong Yun, Georgia Institute of Technology (United States)
Amir Dindar, Georgia Institute of Technology (United States)
Talha M. Khan, Georgia Institute of Technology (United States)
Cheng-Yin Wang, Georgia Institute of Technology (United States)
Bernard Kippelen, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 9185:
Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII
Zhenan Bao; Ruth Shinar; Ioannis Kymissis; Iain McCulloch, Editor(s)

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