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Proceedings Paper

Bulk GaN and its application as substrates in building quantum nanostructures for some electronic and optoelectronic devices
Author(s): M. Bockowski
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Paper Abstract

The use of GaN crystals grown by three methods (and their combinations): Hydride Vapor Phase Epitaxy (HVPE), high nitrogen pressure solution (HNPS) and ammonothermal method for optoelectronic (laser diodes) and electronic (transistors) devices is presented. After a brief review on the development of the three crystallization methods, the GaN crystals’ uniform and unique properties, which allow to use them as substrates for building devices, are shown. The Metal Organic Vapor Phase Epitaxy (MOCVD) and Molecular Beam Epitaxy (MBE) technologies for growing the nitride quantum nanostructures as well as the structures’ properties and processing of devices are demonstrated. Future challenges and perspectives for application of bulk GaN as substrates in building quantum nanostructures for some electronic and optoelectronic devices are discussed.

Paper Details

Date Published: 16 September 2014
PDF: 10 pages
Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 91740G (16 September 2014); doi: 10.1117/12.2059749
Show Author Affiliations
M. Bockowski, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)


Published in SPIE Proceedings Vol. 9174:
Nanoepitaxy: Materials and Devices VI
Nobuhiko P. Kobayashi; A. Alec Talin; Albert V. Davydov; M. Saif Islam, Editor(s)

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