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Proceedings Paper

Nonvolatile organic transistor memory devices based on nanostructured polymeric materials
Author(s): Mau-Shen Lu; Chien Lu; Meng-Hsien Li; Cheng-Liang Liu; Wen-Chang Chen
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Paper Abstract

We report the characteristics of ferroelectric field effect transistor (FeFET) nonvolatile flash memory devices using aligned P(VDF-TrFE) electrospun nanofibers as the dielectric layer. These FeFET devices showed reliable memory behaviors and memory window proportional to the quantity of aligned nanofibers containing the ferroelectric β-phase crystalline domain. Moreover, the FeFET devices using nanofibers exhibited the long-term stability in the data retention larger than 104 s with the ON/OFF ratio of ~103, and the multiple switching operation stability up to 100 cycles.

Paper Details

Date Published: 7 October 2014
PDF: 11 pages
Proc. SPIE 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII, 91850N (7 October 2014); doi: 10.1117/12.2059165
Show Author Affiliations
Mau-Shen Lu, National Taiwan Univ. (Taiwan)
Chien Lu, National Taiwan Univ. (Taiwan)
Meng-Hsien Li, National Taiwan Univ. (Taiwan)
Cheng-Liang Liu, National Central Univ. (Taiwan)
Wen-Chang Chen, National Taiwan Univ. (Taiwan)


Published in SPIE Proceedings Vol. 9185:
Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII
Zhenan Bao; Ruth Shinar; Ioannis Kymissis; Iain McCulloch, Editor(s)

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