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Proceedings Paper

Defects in undoped semi-insulating InP
Author(s): Yan Chen; Xin Guo
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Paper Abstract

This paper, the electron irradiation-induced defects in undoped InP has undergone a high-temperature annealing in iron phosphide ambience. The positron annihilation lifetime spectroscopy (PAL) and thermally stimulated current spectroscopy (TSC) have been employed to study it . The results proved that, the defects in SI-InP after electron irradiation increases and the complex defects are formed . The positron mean lifetime increases about 18 ps , and more defect peaks are also found in the TSC after irradiation.

Paper Details

Date Published: 21 February 2014
PDF: 4 pages
Proc. SPIE 9142, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013, 914217 (21 February 2014); doi: 10.1117/12.2057684
Show Author Affiliations
Yan Chen, Mianyang Normal Univ. (China)
Xin Guo, Mianyang Normal Univ. (China)


Published in SPIE Proceedings Vol. 9142:
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013
Jorge Ojeda-Castaneda; Shensheng Han; Ping Jia; Jiancheng Fang; Dianyuan Fan; Liejia Qian; Yuqiu Gu; Xueqing Yan, Editor(s)

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