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Proceedings Paper

Silicon sensor quantum efficiency, reflectance, and calibration
Author(s): Michael Lesser
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Paper Abstract

Quantum Efficiency (QE) is one of the most important parameters when either evaluating or using an imaging sensor for scientific applications. For back illuminated CCD and CMOS imagers, QE is determined by temperature, antireflection (AR) coatings, backside charging mechanisms, and silicon thickness. The accurate and precise measurement of QE requires careful consideration of illumination, temperature, calibration standards, optics, electronic equipment and components, and scattered light. QE is also closely related to the reflectance from the sensor surface. We present in this paper a study of the QE and reflectance from a variety of sensors used for astronomical imaging. Particular attention is given to precise calibration, temperature effects, models vs. measurements, and measurement techniques. We discuss all these issues and how they relate to the measurement and actual performance of sensors with different areas, thicknesses, and AR coatings.

Paper Details

Date Published: 23 July 2014
PDF: 12 pages
Proc. SPIE 9154, High Energy, Optical, and Infrared Detectors for Astronomy VI, 915411 (23 July 2014); doi: 10.1117/12.2054752
Show Author Affiliations
Michael Lesser, The Univ. of Arizona (United States)


Published in SPIE Proceedings Vol. 9154:
High Energy, Optical, and Infrared Detectors for Astronomy VI
Andrew D. Holland; James Beletic, Editor(s)

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