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Proceedings Paper

Evaluation of 1/f noise in prospective IR imaging thin films
Author(s): Hitesh A. Basantani; David B. Saint John; Nikolas J. Podraza; Thomas N. Jackson; Mark W. Horn
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Paper Abstract

Vanadium oxide (VOx) and hydrogenated silicon germanium (SixGe1-x) are the two predominant thin film material systems used as the active layer in resistive infrared imaging. Thin films of VOx used in microbolometers have a resistivity typically between 0.1 and 1 Ω-cm with a temperature coefficient of resistance, |TCR| between 1.4%/K to 2.4%/K, while SixGe1-x:H thin films have a resistivity between 200-4,000 Ω-cm with a |TCR| between 2.9%/K to 3.9%/K. Future devices may require higher TCR materials, however, higher TCR is loosely associated with higher resistivity and therefore also with high noise. This work compares 1/f noise of high resistivity VOx and Ge:H thin films having |TCR| < 3.6%/K. The high TCR thin films of VOx were found to be amorphous while, depending on the deposition conditions, the Ge:H thin films were either amorphous or mixed phase of amorphous + nanocrystalline. Evaluation of these VOx and Ge:H thin films indicates a prospects for a superior process-property relation of 1/f noise in Ge:H thin films in comparison with thin films of VOx.

Paper Details

Date Published: 24 June 2014
PDF: 7 pages
Proc. SPIE 9070, Infrared Technology and Applications XL, 90701P (24 June 2014); doi: 10.1117/12.2054652
Show Author Affiliations
Hitesh A. Basantani, The Pennsylvania State Univ. (United States)
David B. Saint John, The Pennsylvania State Univ. (United States)
Nikolas J. Podraza, Univ. of Toledo (United States)
Thomas N. Jackson, The Pennsylvania State Univ. (United States)
Mark W. Horn, The Pennsylvania State Univ. (United States)


Published in SPIE Proceedings Vol. 9070:
Infrared Technology and Applications XL
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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