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Proceedings Paper

Theoretical investigation of output features of a diode-pumped rubidium vapor laser
Author(s): You Wang; He Cai; Wei Zhang; Liangping Xue; Hongyuan Wang; Juhong Han
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Paper Abstract

In the recent years, diode-pumped alkali lasers (DPALs) have been paid many attentions because of their excellent performances. In fact, the characteristics of a DPAL strongly depend on the physical features of buffer gases. In this report, we selected a diode-pumped rubidium vapor laser (DPRVL), which is an important type among three common DPALs, to investigate how the characteristics of a DPRVL are affected by different conditions. The results signify that the population ratio of two excitation energy-levels are close to that corresponding to thermal equilibrium as the pressure of buffer gases and the temperature of a vapor cell become higher. It has been found that quenching of the upper levels cannot be simply ignored especially for the case of weak pump. The conclusions are thought to be helpful for the configuration design of an end-pumped DPAL.

Paper Details

Date Published: 21 February 2014
PDF: 9 pages
Proc. SPIE 9142, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013, 914227 (21 February 2014); doi: 10.1117/12.2054233
Show Author Affiliations
You Wang, Southwest Institute of Technical Physics (China)
He Cai, Southwest Institute of Technical Physics (China)
Wei Zhang, Southwest Institute of Technical Physics (China)
Liangping Xue, Southwest Institute of Technical Physics (China)
Hongyuan Wang, Southwest Institute of Technical Physics (China)
Juhong Han, Southwest Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9142:
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013
Jorge Ojeda-Castaneda; Shensheng Han; Ping Jia; Jiancheng Fang; Dianyuan Fan; Liejia Qian; Yuqiu Gu; Xueqing Yan, Editor(s)

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