Share Email Print
cover

Proceedings Paper

Microstructural characterization of Bi2Te3 thin films prepared by hot wall epitaxy
Author(s): Jianhua Guo; Huiyong Deng; Gujin Hu; Xiaonan Li; Guolin Yu; Ning Dai
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The influence of growth conditions on the microstructures of Bi2Te3 films grown on (111) and (100)-oriented GaAs substrates by hot wall epitaxy is investigated using X-ray diffraction, scan electron microscopy, energy dispersive spectrum, high resolution transmission electron microscopy and micro-Raman spectroscopy. It is found that high quality Bi2Te3 thin films with c-axis oriented are prepared when the temperatures of the Bi2Te3 source and (111) GaAs substrate are 505°C and 375°C respectively. The low substrate temperature and the crystal symmetry mismatch between the (100) GaAs substrate and Bi2Te3 epitaxial film make the crystalline grains mis-oriented, which are responsible for the degradation of the crystal quality of Bi2Te3 films. In addition, the low substrate temperature could lead to the non-stoichiometry.

Paper Details

Date Published: 16 December 2013
PDF: 5 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681J (16 December 2013); doi: 10.1117/12.2054129
Show Author Affiliations
Jianhua Guo, Shanghai Institute of Technical Physics (China)
Huiyong Deng, Shanghai Institute of Technical Physics (China)
Gujin Hu, Shanghai Institute of Technical Physics (China)
Xiaonan Li, Shanghai Institute of Technical Physics (China)
Guolin Yu, Shanghai Institute of Technical Physics (China)
Ning Dai, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

© SPIE. Terms of Use
Back to Top