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Proceedings Paper

Thin film poly-crystalline silicon fabrication based on Rapid Thermal Annealing (RTA) process
Author(s): Jun Qian; Jirong Li; Yang Liao; Weimin Shi; Huahui Kuang; Xiuchun Ming; Jin Liu; Jing Jin; Juan Qin
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Paper Abstract

Rapid Thermal Annealing (RTA) process was introduced to the experiment of Aluminum-induced crystallization of a-Si, based on sputtering method, on low cost glass substrate. A stack of glass/Al (150 nm)/Si (220 nm) was deposited by sputtering sequentially. Samples were annealed under RTA process, then annealed in the tube annealing furnace at 400 °C for 5 h. The grain crystallization was inspected by optical microscopy (OM), ,Raman spectroscopy, X-ray diffraction (XRD),and energy dispersive spectroscopy (EDS). The preferential orientation (111) was observed, with a Raman Peak at 520.8cm-1, Different annealing periods were discussed.

Paper Details

Date Published: 16 December 2013
PDF: 4 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680M (16 December 2013); doi: 10.1117/12.2054037
Show Author Affiliations
Jun Qian, Shanghai Univ. (China)
Jirong Li, Shanghai Univ. (China)
Yang Liao, Shanghai Univ. (China)
Weimin Shi, Shanghai Univ. (China)
Huahui Kuang, Shanghai Univ. (China)
Xiuchun Ming, Shanghai Univ. (China)
Jin Liu, Shanghai Univ. (China)
Jing Jin, Shanghai Univ. (China)
Juan Qin, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

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