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Proceedings Paper

Co-Sb thermoelectric thin films prepared by ion beam sputtering
Author(s): Wei-fang Fan; Ping Fan; Zhuang-hao Zheng; Yin Zhang; Guang-xing Liang; Dong-ping Zhang; Jing-ting Luo
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Paper Abstract

Co-Sb is a new kind of promising thermoelectric material depending on its extremely high hole mobility, high thermoelectric power and relatively low thermal conductivity because of its complicated crystal structure. In order to obtain the best Co/Sb composition ratios, thin films with various Co/Sb composition ratios were obtained by ion beam sputtering technique with a fan-shaped target at room-temperature. The target was made by different Co and Sb plate’s areas. All the samples were annealed at 350 °C and 400 °C for one hour in vacuum chamber. The maximum Seebeck coefficient of the thin films was -210 μV/K when the thin film was annealed at 400 °C whose plate areas ratios of Co/Sb was 1:3. However the thin film possessing the maximum Seebeck coefficient has a large resistivity that causes the worse thermoelectric property. When plate ratio of Co/Sb is 1:4, the thin film had the maximum power factor of 1.56 mWm-1K-2 with an moderate seebeck coefficient of -41 μV/K and an conductivity of 9.3×105 Sm-1.

Paper Details

Date Published: 16 December 2013
PDF: 5 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681D (16 December 2013); doi: 10.1117/12.2054019
Show Author Affiliations
Wei-fang Fan, Shenzhen Univ. (China)
Ping Fan, Shenzhen Univ. (China)
Zhuang-hao Zheng, Shenzhen Univ. (China)
Yin Zhang, Shenzhen Univ. (China)
Guang-xing Liang, Shenzhen Univ. (China)
Dong-ping Zhang, Shenzhen Univ. (China)
Jing-ting Luo, Shenzhen Univ. (China)


Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

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