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Proceedings Paper

The influence of precursor films on CIGS films prepared by ion beam sputtering deposition
Author(s): Jun Zhao; Ping Fan; Guangxing Liang; Zhuanghao Zheng; Dongping Zhang; Chaoming Chen
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Paper Abstract

The CuInGa(CIG) precursor films were grown by ion beam sputtering continuously CuGa/CuIn and CuIn/CuGa, and then selenized CIG to fabricate CIGS absorber films on molybdenum substrates . They were annealed in the same vacuum chamber and under the same temperature (500°C). The CIGS thin films were characterized with X-ray diffraction (XRD), Energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM) in order to study the microstructures, composition, surface morphology, electrical properties, respectively. The results showed that the CIGS thin films appeared smooth and compact with a sequence of Mo/CuGa/CuIn/Se, which were mainly of chalcopyrite structure. The CIGS thin films got the strongest diffraction peak intensity and were with good crystalline quality.

Paper Details

Date Published: 16 December 2013
PDF: 5 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681H (16 December 2013); doi: 10.1117/12.2054017
Show Author Affiliations
Jun Zhao, Shenzhen Univ. (China)
Ping Fan, Shenzhen Univ. (China)
Guangxing Liang, Shenzhen Univ. (China)
Zhuanghao Zheng, Shenzhen Univ. (China)
Dongping Zhang, Shenzhen Univ. (China)
Chaoming Chen, Shenzhen Univ. (China)

Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

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