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Proceedings Paper

Room temperature InGaAs hot electron detector for THz/subTHz regions
Author(s): Jinchao Tong; Jingguo Huang; Zhiming Huang; Junhao Chu
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Paper Abstract

A THz/subTHz radiation detector based on MOCVD-grown modulation-doped InxGa1-xAs/InP structure is proposed. Devices have bow-tie metallic antennas to improve the couple efficiency about 5 dB and are fabricated with mesas of 3 μm depth by wet etching. Detection by hot electron effects under external electromagnetic radiation is explained. Measurements performed at electromagnetic wave frequency f=0.0375 THz show the detector having sensitivity about 6 V/W and noise equivalent power (NEP) about 1.6×10-9 W/Hz1/2 at room temperatures.

Paper Details

Date Published: 21 February 2014
PDF: 7 pages
Proc. SPIE 9142, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013, 914202 (21 February 2014); doi: 10.1117/12.2054015
Show Author Affiliations
Jinchao Tong, Shanghai Institute of Technical Physics (China)
Jingguo Huang, Shanghai Institute of Technical Physics (China)
Zhiming Huang, Shanghai Institute of Technical Physics (China)
Junhao Chu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9142:
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013
Jorge Ojeda-Castaneda; Shensheng Han; Ping Jia; Jiancheng Fang; Dianyuan Fan; Liejia Qian; Yuqiu Gu; Xueqing Yan, Editor(s)

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