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Proceedings Paper

Ultrafast bandgap technique: light-induced semiconductor augmentation
Author(s): I. K. Zakharova; M. K. Rafailov
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Paper Abstract

Bleaching by ultra-short pulses is discussed as an opportunity for semiconductor optical augmentation. The ability of ultra-short laser pulse to excite and remove electrons in-bulk from valence band may be used to prevent generation of thermal electrons for extended period of time. That time is correlated with recombination time. Diminishing the number of electrons that are available for thermal excitation leads to thermal noise reduction in the same way as semiconductor cooling. Technology based on the effect may be used as effective alternative to thermal cooling, and may allow some semiconductors effectively be exploited at ambient temperatures. Specifically, high sensitive and fast detectors as well as semiconductor lasers covering long and very long-wavelengths may actually work without extra cooling., needed to reduce thermal noise. In this paper, we will consider the effects caused by relatively low pulse energy ultra-short pulse lasers.

Paper Details

Date Published: 4 June 2014
PDF: 7 pages
Proc. SPIE 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI, 90832I (4 June 2014); doi: 10.1117/12.2054010
Show Author Affiliations
I. K. Zakharova, Univ. of Alberta (Canada)
M. K. Rafailov, Univ. of Alberta (Canada)

Published in SPIE Proceedings Vol. 9083:
Micro- and Nanotechnology Sensors, Systems, and Applications VI
Thomas George; M. Saif Islam; Achyut K. Dutta, Editor(s)

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