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Proceedings Paper

Rectifying properties and colossal magnetoresistance in La0.9Hf0.1MnO3 /Nb-0.7 wt%-doped SrTiO3 heterojunction
Author(s): Lin Wang; Zhenping Wu; Yucheng Jiang; Bing Ren; Jian Huang; Ke Tang; Wenzhu Zhang; Ju Gao; Linjun Wang
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Paper Abstract

A heterojunction with good rectifying properties in a wide temperature range from 20 K to 300 K was fabricated simply by depositing an as-grown La0.9Hf0.1MnO3 (LHMO) film on a commercial 0.7 wt% Nb-doped SrTiO3 single crystal substrate using pulsed laser deposition technique. The current-voltage behavior of the LHMO/STON is measured under applied magnetic fields varying between 0 and 5 T. The heterojunction shows a remarkable magnetoresistance which depends on both the temperature and bias voltages. The sign of the magnetoresistance as function of temperature at either forward or reverse bias voltage is extensively studied by the filling of electrons in the eg and t2g band. The good rectifying behaviors, the magnetic tunable properties and the maximum magnetoresistance obtained at room temperature make this simple heterojunction promising for practical applications.

Paper Details

Date Published: 16 December 2013
PDF: 6 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681O (16 December 2013); doi: 10.1117/12.2054009
Show Author Affiliations
Lin Wang, Shanghai Univ. (China)
Zhenping Wu, Beijing Univ. of Posts and Telecommunications (China)
Yucheng Jiang, The Univ. of Hong Kong (Hong Kong, China)
Bing Ren, Shanghai Univ. (China)
Jian Huang, Shanghai Univ. (China)
Ke Tang, Shanghai Univ. (China)
Wenzhu Zhang, Shanghai Univ. (China)
Ju Gao, The Univ. of Hong Kong (Hong Kong, China)
Linjun Wang, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

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