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Proceedings Paper

Highly (222)-oriented pyrochlore PZN-PT thin films prepared by pulsed laser deposition
Author(s): H. L. Han; A. Y. Liu; L. L. Wei; P. Wang; F. T. Lin; W. Z. Shi; C. B. Jing
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Paper Abstract

Highly (222)-oriented 90%Pb(Zn1/3Nb2/3)O3-10%PbTiO3(abbreviated PZN–PT) thin films, about 550nm in thickness, have been successfully grown on (111)Pt/Ti/SiO2/Si substrate by pulsed laser deposition method. Pure pyrochlore phase with highly (222)-preferred orientation, determined by X-ray diffraction, was formed in the PZN–PT thin films when the temperature of substrates is 550°C. FE-SEM investigation shows that the surface appearance and the cross section of the films are smooth and crack-free with some dispersive spherical protrusions. The dielectric constant and loss of the thin films were measured using an impedance analyzer (HP4194A). The dielectric constant ( εr ) and the dissipation factor ( tanδ ) at 1 kHz are 205 and 0.03, respectively.

Paper Details

Date Published: 16 December 2013
PDF: 5 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680U (16 December 2013); doi: 10.1117/12.2053925
Show Author Affiliations
H. L. Han, Shanghai Normal Univ. (China)
A. Y. Liu, Shanghai Normal Univ. (China)
L. L. Wei, Shanghai Normal Univ. (China)
P. Wang, Shanghai Normal Univ. (China)
F. T. Lin, Shanghai Normal Univ. (China)
W. Z. Shi, Shanghai Normal Univ. (China)
C. B. Jing, East China Normal Univ. (China)

Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

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