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Proceedings Paper

Reduction of image optics dependence of resist image performance for high NA extreme ultraviolet lithography
Author(s): Ouyang Chun; Yanqiu Li; Lihui Liu
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Paper Abstract

High Numerical Aperture (NA) extreme ultraviolet lithography (EUVL) with different reduction is one option for 16 nm node and below. In our work, as NA increases to about 0.45, we discuss the impacts of reduction ratio of 5 or 6 on resist image performance such as Horizontal-Vertical (H-V) critical dimension (CD) bias for various incident angles and CD Uniformity induced by mask CD errors at wafer level. Commercial software PROLITH ™ and in-house program are adopted in simulation referred above. In conclusion, resist image performance can be improved with the increase of reduction ratio. H-V CD Bias with reduction ratio of 6 is obviously smaller than that with reduction ratio of 5 at maximum incident angle. Additionally, CD Uniformity (nm, 3 sigma) induced by mask CD errors for 5× optics system is larger, which means image quality is worse at 5× optics system.

Paper Details

Date Published: 31 December 2013
PDF: 9 pages
Proc. SPIE 9042, 2013 International Conference on Optical Instruments and Technology: Optical Systems and Modern Optoelectronic Instruments, 90421J (31 December 2013); doi: 10.1117/12.2053896
Show Author Affiliations
Ouyang Chun, Beijing Institute of Technology (China)
Yanqiu Li, Beijing Institute of Technology (China)
Lihui Liu, Beijing Institute of Technology (China)


Published in SPIE Proceedings Vol. 9042:
2013 International Conference on Optical Instruments and Technology: Optical Systems and Modern Optoelectronic Instruments
Yongtian Wang; Xiaocong Yuan; Yunlong Sheng; Kimio Tatsuno, Editor(s)

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