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Proceedings Paper

Microstructure and electrical properties Of PMNT thin films prepared by a modified sol-gel process
Author(s): Aiyun Liu; Hailong Han; Linlin Wei; Peng Wang; Fangting Lin; Wangzhou Shi; Xiangjian Meng; Jinglan Sun; Junhao Chu; Chengbin Jing
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Paper Abstract

0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMNT) thin films were prepared on (111)Pt/Ti/SiO2/Si substrate by a modified sol-gel process with Nb2O5 as the niobium source. XRD analysis shows that PMNT thin films with pure perovskite were obtained by spin-coating and annealing at 700°C for 20 minutes. The remanent polarization and coercive field of the PMNT thin films are about 7.69μC/cm2 and 80.75kV/cm, respectively. The dielectric and C-V curve of PMNT thin films are also investigated. The dielectric constant ( εr ) reaches 935 and the dissipation factor (tanδ)is about 0.04 at 1kHz.

Paper Details

Date Published: 16 December 2013
PDF: 5 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680R (16 December 2013); doi: 10.1117/12.2053858
Show Author Affiliations
Aiyun Liu, Shanghai Normal Univ. (China)
Hailong Han, Shanghai Normal Univ. (China)
Linlin Wei, Shanghai Normal Univ. (China)
Peng Wang, Shanghai Normal Univ. (China)
Fangting Lin, Shanghai Normal Univ. (China)
Wangzhou Shi, Shanghai Normal Univ. (China)
Xiangjian Meng, Shanghai Institute of Technical Physics (China)
Jinglan Sun, Shanghai Institute of Technical Physics (China)
Junhao Chu, Shanghai Institute of Technical Physics (China)
Chengbin Jing, East China Normal Univ. (China)


Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

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