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Proceedings Paper

Demonstration and analysis of Pockels effect in strained silicon
Author(s): Pedro A. Damas; Xavier Le Roux; Eric Cassan; Delphine Marris-Morini; Nicolas Izard; Alain Bosseboeuf; Thomas Maroutian; Philippe Lecouer; Laurent Vivien
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Paper Details

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Proc. SPIE 9133, Silicon Photonics and Photonic Integrated Circuits IV, 91330K; doi: 10.1117/12.2053766
Show Author Affiliations
Pedro A. Damas, Institut d’Electronique Fondamentale, CNRS-Univ. Paris Sud 11 (France)
Xavier Le Roux, Institut d’Electronique Fondamentale, CNRS-Univ. Paris Sud 11 (France)
Eric Cassan, Institut d’Electronique Fondamentale, CNRS-Univ. Paris Sud 11 (France)
Delphine Marris-Morini, Institut d’Electronique Fondamentale, CNRS-Univ. Paris Sud 11 (France)
Nicolas Izard, Institut d’Electronique Fondamentale, CNRS-Univ. Paris Sud 11 (France)
Alain Bosseboeuf, Institut d’Electronique Fondamentale, CNRS-Univ. Paris Sud 11 (France)
Thomas Maroutian, Institut d’Electronique Fondamentale, CNRS-Univ. Paris Sud 11 (France)
Philippe Lecouer, Institut d’Electronique Fondamentale, CNRS-Univ. Paris Sud 11 (France)
Laurent Vivien, Institut d’Electronique Fondamentale, CNRS-Univ. Paris Sud 11 (France)


Published in SPIE Proceedings Vol. 9133:
Silicon Photonics and Photonic Integrated Circuits IV
Laurent Vivien; Seppo Honkanen; Lorenzo Pavesi; Stefano Pelli; Jung Hun Shin, Editor(s)

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