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Proceedings Paper

Effects of post annealing on structural, electrical and optical properties of ZnO:Al thin films prepared by RF magnetron sputtering
Author(s): Jianhua Ma; Yan Liang; Niangjuan Yao; Xiaojing Zhu; Jinchun Jiang; Junhao Chu
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Paper Abstract

Al doped ZnO (ZnO:Al, AZO) thin films were deposited on ordinary soda-lime glass (SLG) substrates by RF magnetron sputtering. Effects of post annealing (300~600 °C for 2~30 min in air and N2, respectively) were studied. All the films were wurtzite structure with highly c-axis preferential orientation. Their electrical properties were relatively stable at the post annealing temperature of 300 °C. As the temperature further increasing, post annealing in air leaded to drastic degradation in the electrical properties, while that in N2 had relatively small influence. Diffusion of alkali ions from SLG substrates was deduced to be one of the influence factors for electrical properties. The spectra measurements showed that the post annealing mainly affected the transmittance in the near-infrared and infrared (NIR-IR) range and the optical band gap (Eg). The variation of Eg was attributed to the Burstein-Moss (BM) shift modulated by many-body effects.

Paper Details

Date Published: 16 December 2013
PDF: 6 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680F (16 December 2013); doi: 10.1117/12.2053632
Show Author Affiliations
Jianhua Ma, Shanghai Institute of Technical Physics (China)
Shanghai Ctr. for Photovoltaics (China)
Yan Liang, Shanghai Ctr. for Photovoltaics (China)
Niangjuan Yao, Shanghai Ctr. for Photovoltaics (China)
Xiaojing Zhu, Shanghai Institute of Technical Physics (China)
Jinchun Jiang, Shanghai Ctr. for Photovoltaics (China)
Junhao Chu, Shanghai Institute of Technical Physics (China)
Shanghai Ctr. for Photovoltaics (China)


Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

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