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Proceedings Paper

Growth and characterization of Sb2Te3 thin film deposited by pulsed laser method
Author(s): Tantan Liu; Hongmei Deng; Pingxiong Yang; Jun Zhang; Huiyi Cao; Jun He; Junhao Chu
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Paper Abstract

Sb2Te3 film was deposited on glass substrates which were heated at180°C by pulsed laser deposition (PLD) process using Sb2Te3 target. The crystal structure and crystallization behavior of Sb2Te3 film was determined by X-ray diffraction (XRD) and Raman spectra, respectively. The surface morphology of the film was measured by atomic force microscope (AFM). The results suggest that the crystalline of Sb2Te3 thin film was crystallized well when the substrate temperature (Tsub) was 180°C, which indicated that Sb2Te3 thin film can be fabricated by PLD at suitable temperature.

Paper Details

Date Published: 16 December 2013
PDF: 5 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681E (16 December 2013); doi: 10.1117/12.2053508
Show Author Affiliations
Tantan Liu, East China Normal Univ. (China)
Hongmei Deng, Shanghai Univ. (China)
Pingxiong Yang, East China Normal Univ. (China)
Jun Zhang, East China Normal Univ. (China)
Huiyi Cao, East China Normal Univ. (China)
Jun He, East China Normal Univ. (China)
Junhao Chu, East China Normal Univ. (China)

Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

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