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Proceedings Paper

The characterization of CuInSe2 thin films by a sequential processes of sputtering and selenization
Author(s): Jun Zhang; Hongmei Deng; Pingxiong Yang; Jun He; Tantan Liu; Lin Sun; Junhao Chu
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Paper Abstract

Ternary CuInSe2 (CIS) thin films were deposited on glass substrates using a binary CuIn alloy target and an elemental Cu target by employing radio-frequency (RF) magnetron sputtering process and post-selenization process. The selenization procedure is carried out within a partially close-spaced graphite box. The Cu content in CIS thin films can be controlled by different sputtering time of Cu target. The result of energy dispersive X-ray spectroscopy (EDX) indicated that the CIS thin film prepared by single CuIn alloys target had significantly composition deviation. Combined with the X-ray diffraction (XRD) and Raman spectra results showed that all CIS thin films have chalcopyrite structure. Further transmission spectra demonstrated that the optical band gap of CIS thin film is about 1.0 eV.

Paper Details

Date Published: 16 December 2013
PDF: 6 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681R (16 December 2013); doi: 10.1117/12.2053499
Show Author Affiliations
Jun Zhang, East China Normal Univ. (China)
Hongmei Deng, Shanghai Univ. (China)
Pingxiong Yang, East China Normal Univ. (China)
Jun He, East China Normal Univ. (China)
Tantan Liu, East China Normal Univ. (China)
Lin Sun, East China Normal Univ. (China)
Junhao Chu, East China Normal Univ. (China)

Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

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