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Proceedings Paper

Molybdenum (Mo) back contacts for CIGS solar cells
Author(s): Xiaofeng Ma; Dingquan Liu; Lihong Yang; Shaohua Zuo; Ming Zhou
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Paper Abstract

Mo metal back contacts for CIGS solar cells have been reviewed. The electrical resistivity, reflectance and adhesive properties of Mo thin films are affected strongly by the film deposition parameters. A Mo thin film with low resistivity and good adhesion can be obtained through two-step process. This bilayer Mo thin film can be formed through the different film structures depending on the working pressure. A MoSe2 layer formed at CIGS/Mo interface changes the CIGS/Mo hetero-contact from Schottky-type contact to ohmic-type contact. It also improves the adhesion between CIGS and Mo layers when its c-axis is parallel to the Mo surface. Additionally, it forms the back surface field for CIGS solar cells. However, the MoSe2 formation and c-axis orientation depend on the state of Mo prior to selenization, the medium of selenization, and the substrate temperature during selenization. At last, a single layer Mo thin film with low enough resistivity and good adhesion has been fabricated successfully by the pulse magnetron sputtering technology with appropriate deposition parameters.

Paper Details

Date Published: 16 December 2013
PDF: 11 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 906814 (16 December 2013); doi: 10.1117/12.2053498
Show Author Affiliations
Xiaofeng Ma, Shanghai Institute of Technical Physics (China)
Shanghai Ctr. for Photovoltaics (China)
Dingquan Liu, Shanghai Institute of Technical Physics (China)
Lihong Yang, Shanghai Ctr. for Photovoltaics (China)
Shaohua Zuo, Shanghai Ctr. for Photovoltaics (China)
Ming Zhou, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

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