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Proceedings Paper

An investigation of passivation properties of SiNx-Si interface by an MIS model
Author(s): Jun Wang; Meijie Han; Xueliang Ma; Hua Zhang; Ping Chen; Haixin Zhu
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Paper Abstract

This paper presents a new way to study passivation mechanism of SiNx-Si interface using capacitance-voltage method. Fixed charge density (Nf) near dielectric/Si interface, which is closely related to field effect passivation, and interface trap density (Dit) at dielectric/Si interface, which is closely related to chemical passivation, can be obtained directly from experimental CV characteristics. The passivation properties of SiNx-Si can be studied and optimized by the MIS model.

Paper Details

Date Published: 16 December 2013
PDF: 4 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680Z (16 December 2013); doi: 10.1117/12.2053225
Show Author Affiliations
Jun Wang, Shanghai Dianji Univ. (China)
Meijie Han, Shanghai Dianji Univ. (China)
Xueliang Ma, Shanghai Dianji Univ. (China)
Hua Zhang, Shanghai Dianji Univ. (China)
Ping Chen, Shanghai Dianji Univ. (China)
Haixin Zhu, Shanghai Dianji Univ. (China)


Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

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