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Proceedings Paper

Demonstration of a quick process to achieve buried heterostructure QCL leading to high power and wall plug efficiency
Author(s): W. Metaferia; B. Simozrag; C. Junesand; Y.-T. Sun; M. Carras; F. Capasso; R. Blanchard; S. Lourdudoss
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Paper Abstract

Together with the optimal basic design, buried heterostructure quantum cascade laser (BH-QCL) with semi-insulating regrowth offers unique possibility to achieve an effective thermal dissipation and lateral single mode. We demonstrate here for the first time realization of BH-QCLs with a single step regrowth of highly resistive (<1x108 ohm•cm) semiinsulating InP:Fe in less than 45 minutes in a flexible hydride vapour phase epitaxy process for burying ridges etched down to 10-15 μm deep both with and without mask overhang. The fabricated BH-QCLs emitting at ~4.7 μm and ~5.5 μm were characterized. 2 mm long 5.5 μm lasers with ridge width 17-22 μm, regrown with mask overhang, exhibited no leakage current. Large width and high doping in the structure did not permit high current density for CW operation. 5 mm long 4.7 μm BH-QCLs of ridge widths varying from 6-14 μm regrown without mask overhang, besides being spatially monomode, TM00, exhibited WPE of ~8-9% with an output power of 1.5 – 2.5 W at room temperature and under CW operation. Thus, we demonstrate a simple, flexible, quick, stable and single-step regrowth process with extremely good planarization for realizing buried QCLs leading to monomode, high power and high WPE.

Paper Details

Date Published: 9 June 2014
PDF: 8 pages
Proc. SPIE 9081, Laser Technology for Defense and Security X, 90810O (9 June 2014); doi: 10.1117/12.2053003
Show Author Affiliations
W. Metaferia, KTH Royal Institute of Technology (Sweden)
B. Simozrag, III-V Lab., Thales Research & Technology (France)
C. Junesand, KTH Royal Institute of Technology (Sweden)
Epiclarus AB (Sweden)
Y.-T. Sun, KTH Royal Institute of Technology (Sweden)
M. Carras, III-V Lab., Thales Research & Technology (France)
F. Capasso, Harvard Univ. (United States)
R. Blanchard, Harvard Univ. (United States)
S. Lourdudoss, KTH Royal Institute of Technology (Sweden)


Published in SPIE Proceedings Vol. 9081:
Laser Technology for Defense and Security X
Mark Dubinskii; Stephen G. Post, Editor(s)

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