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Proceedings Paper

Hybrid III-V/silicon lasers
Author(s): P. Kaspar; C. Jany; A. Le Liepvre; A. Accard; M. Lamponi; D. Make; G. Levaufre; N. Girard; F. Lelarge; A. Shen; P. Charbonnier; F. Mallecot; G.-H. Duan; J. -L. Gentner; J.-M. Fedeli; S. Olivier; A. Descos; B. Ben Bakir; S. Messaoudene; D. Bordel; S. Malhouitre; C. Kopp; S. Menezo
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Paper Abstract

The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

Paper Details

Date Published: 1 May 2014
PDF: 8 pages
Proc. SPIE 9133, Silicon Photonics and Photonic Integrated Circuits IV, 913302 (1 May 2014); doi: 10.1117/12.2052999
Show Author Affiliations
P. Kaspar, III-V Lab, Thales Research and Technology, CEA-LETI (France)
C. Jany, III-V Lab, Thales Research and Technology, CEA-LETI (France)
A. Le Liepvre, III-V Lab, Thales Research and Technology, CEA-LETI (France)
A. Accard, III-V Lab, Thales Research and Technology, CEA-LETI (France)
M. Lamponi, III-V Lab, Thales Research and Technology, CEA-LETI (France)
D. Make, III-V Lab, Thales Research and Technology, CEA-LETI (France)
G. Levaufre, III-V Lab, Thales Research and Technology, CEA-LETI (France)
N. Girard, III-V Lab, Thales Research and Technology, CEA-LETI (France)
F. Lelarge, III-V Lab, Thales Research and Technology, CEA-LETI (France)
A. Shen, III-V Lab, Thales Research and Technology, CEA-LETI (France)
P. Charbonnier, III-V Lab, Thales Research and Technology, CEA-LETI (France)
F. Mallecot, III-V Lab, Thales Research and Technology, CEA-LETI (France)
G.-H. Duan, III-V Lab, Thales Research and Technology, CEA-LETI (France)
J. -L. Gentner, III-V Lab, Thales Research and Technology, CEA-LETI (France)
J.-M. Fedeli, CEA-LETI (France)
S. Olivier, CEA-LETI (France)
A. Descos, CEA-LETI (France)
B. Ben Bakir, CEA-LETI (France)
S. Messaoudene, CEA-LETI (France)
D. Bordel, CEA-LETI (France)
S. Malhouitre, CEA-LETI (France)
C. Kopp, CEA-LETI (France)
S. Menezo, CEA-LETI (France)


Published in SPIE Proceedings Vol. 9133:
Silicon Photonics and Photonic Integrated Circuits IV
Laurent Vivien; Seppo Honkanen; Lorenzo Pavesi; Stefano Pelli; Jung Hun Shin, Editor(s)

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