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Proceedings Paper

Electro-thermal characteristics of VCSELs: simulations and experiments
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Paper Abstract

We are implementing an electro–thermal simulation tool to optimize the characteristics of GaAs-based vertical- cavity surface-emitting lasers (VCSELs). For this purpose it turned out to be necessary to revisit basic material parameters. In this paper we elaborate on the composition, carrier density, and temperature dependencies of the electron mobility of AlxGa1−xAs semiconductors. We present the principles of the pragmatic quasi-three- dimensional (q3D) device model and show selected results.

Paper Details

Date Published: 2 May 2014
PDF: 8 pages
Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 91342H (2 May 2014); doi: 10.1117/12.2052895
Show Author Affiliations
Markus Daubenschuez, Univ. Ulm (Germany)
Philipp Gerlach, Philips Technologie GmbH (Germany)
Rainer Michalzik, Univ. Ulm (Germany)

Published in SPIE Proceedings Vol. 9134:
Semiconductor Lasers and Laser Dynamics VI
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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