Share Email Print

Proceedings Paper

Point defects in the silicon nanowire
Author(s): A. J. Lu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The single vacancy, the interstitial atom and the substitution atom are the point defects existing in the semiconductors mainly. The geometry and the effect of point defects on the electronic property of the silicon nanowire (SiNW) were theoretically studied in this work. The energy calculation showed that the substitution-vacancy pair was an energetically favored defect formed in SiNWs. Moreover, from the electronic band structures it was found that, the coupling between a substitution atom and a vacancy takes place at a long distance. The formation of a substitution-vacancy pair results in an energy shift of the bands and the vanishment of the donor level of the doped SiNW. So, the existence of a single vacancy takes great effect on the manufacture of the doped SiNWs.

Paper Details

Date Published: 16 December 2013
PDF: 5 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 906805 (16 December 2013); doi: 10.1117/12.2052883
Show Author Affiliations
A. J. Lu, Donghua Univ. (China)

Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

© SPIE. Terms of Use
Back to Top