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Proceedings Paper

Variable temperature photocurrent characterization of quantum dots intermediate band photovoltaic devices
Author(s): E. Garduño-Nolasco; M. Missous; Daniel Donoval; Jaroslav Kováč; Miroslav Mikolášek; Martin Florovič
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Paper Abstract

The key issue for enhancing the efficiency of semiconductor photovoltaic material devices is to reduce point defects recombination phenomena and to extend the absorption wavelength range. By inserting InAs Quantum Dots in a host GaAs semiconductor structure, new energy levels can be generated resulting in wavelength absorption enhancement. Thus, the main objective of this work was to design a material based on GaAs host semiconductor with extended absorption wavelength in the infrared region. We extend our previous characterisation of GaAs/InAs material systems by studying variable temperature photocurrent spectroscopy from 300K down to 50K in order to study the effect of different inter-dot doping profiles on cell efficiency.

Paper Details

Date Published: 15 May 2014
PDF: 8 pages
Proc. SPIE 9140, Photonics for Solar Energy Systems V, 914009 (15 May 2014); doi: 10.1117/12.2052826
Show Author Affiliations
E. Garduño-Nolasco, The Univ. of Manchester (United Kingdom)
M. Missous, The Univ. of Manchester (United Kingdom)
Daniel Donoval, Slovak Univ. of Technology (Slovakia)
Jaroslav Kováč, Slovak Univ. of Technology (Slovakia)
Miroslav Mikolášek, Slovak Univ. of Technology (Slovakia)
Martin Florovič, Slovak Univ. of Technology (Slovakia)


Published in SPIE Proceedings Vol. 9140:
Photonics for Solar Energy Systems V
Ralf B. Wehrspohn; Andreas Gombert, Editor(s)

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