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Proceedings Paper

High precision AlGaAsSb ridge-waveguide etching by in situ reflectance monitored ICP-RIE
Author(s): N. T. Tran; Magnus Breivik; S. K. Patra; Bjørn-Ove Fimland
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Paper Abstract

GaSb-based semiconductor diode lasers are promising candidates for light sources working in the mid-infrared wavelength region of 2-5 μm. Using edge emitting lasers with ridge-waveguide structure, light emission with good beam quality can be achieved. Fabrication of the ridge waveguide requires precise etch stop control for optimal laser performance. Simulation results are presented that show the effect of increased confinement in the waveguide when the etch depth is well-defined. In situ reflectance monitoring with a 675 nm-wavelength laser was used to determine the etch stop with high accuracy. Based on the simulations of laser reflectance from a proposed sample, the etching process can be controlled to provide an endpoint depth precision within ± 10 nm.

Paper Details

Date Published: 9 May 2014
PDF: 8 pages
Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 91342E (9 May 2014); doi: 10.1117/12.2052615
Show Author Affiliations
N. T. Tran, Norwegian Univ. of Science and Technology (Norway)
Magnus Breivik, Norwegian Univ. of Science and Technology (Norway)
S. K. Patra, Norwegian Univ. of Science and Technology (Norway)
Bjørn-Ove Fimland, Norwegian Univ. of Science and Technology (Norway)


Published in SPIE Proceedings Vol. 9134:
Semiconductor Lasers and Laser Dynamics VI
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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