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Proceedings Paper

Coupled-cavity VCSELs: numerical analysis of physical phenomena
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Paper Abstract

A self-consistent model of a GaAs-based 850 nm coupled-cavity vertical-cavity surface-emitting diode laser is presented. The analyzed laser consists of two identical AlGaAs cavities with GaAs quantum wells, separated with 10 pairs of middle DBR. The current apertures are realized by ion-implantation for the top cavity and selective oxidation for the bottom. To accurately simulate the physical phenomena present in the CW regime of the analyzed device, we use a multi-physical model, which comprises self-consistent Finite Element Method (FEM) thermo-electrical model. The numerical parameters have been found by the calibration based on experimental results. We have analyzed and shown the influence of the driving voltages on the temperature distribution within the analyzed structure and current densities in both cavities.

Paper Details

Date Published: 2 May 2014
PDF: 8 pages
Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 91342C (2 May 2014); doi: 10.1117/12.2052602
Show Author Affiliations
Leszek Frasunkiewicz, Technical Univ. of Lodz (Poland)
Vrije Univ. Brussel (Belgium)
Maciej Dems, Technical Univ. of Lodz (Poland)
Robert P. Sarzała, Technical Univ. of Lodz (Poland)
Kent D. Choquette, Univ. of Illinois at Urbana-Champaign (United States)
Krassimir Panajotov, Vrije Univ. Brussel (Belgium)
Institute of Solid State Physics (Bulgaria)
Tomasz Czyszanowski, Technical Univ. of Lodz (Poland)

Published in SPIE Proceedings Vol. 9134:
Semiconductor Lasers and Laser Dynamics VI
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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