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Proceedings Paper

Wavelength control in fabrication of wafer fused VCSELs emitting in the 1310 nm waveband
Author(s): A. Sirbu; V. Iakovlev; A. Mereuta; A. Caliman; G. Suruceanu; Z. Mickovic; Eli Kapon
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Paper Abstract

Emission wavelength setting of 1310nm-waveband VCSELs designed for coarse wavelength division multiplexing (CWDM) 4x10 Gbps fiber-optics transmission can be controlled thanks to the wafer fusion fabrication approach. This approach allows performing the cavity adjustment before bonding the distributed Bragg reflectors (DBRs) to the active cavity of the device. Cavity adjustment was performed by digital etching with nanometer precision and proves to be very effective in compensating for epitaxial growth thickness off-set relative to nominal design and thickness nonuniformity across the wafer. With this fabrication approach we reach on fused VCSEL wafers more than 90% yield of devices that fit the CWDM wavelength slots.

Paper Details

Date Published: 9 May 2014
PDF: 9 pages
Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 91340B (9 May 2014); doi: 10.1117/12.2052557
Show Author Affiliations
A. Sirbu, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
V. Iakovlev, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
BeamExpress S.A. (Switzerland)
A. Mereuta, BeamExpress S.A. (Switzerland)
A. Caliman, BeamExpress S.A. (Switzerland)
G. Suruceanu, BeamExpress S.A. (Switzerland)
Z. Mickovic, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Eli Kapon, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
BeamExpress S.A. (Switzerland)


Published in SPIE Proceedings Vol. 9134:
Semiconductor Lasers and Laser Dynamics VI
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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