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Proceedings Paper

Simulation and geometrical design of multi-section tapered semiconductor optical amplifiers at 1.57 µm
Author(s): J. M. G. Tijero; L. Borruel; M. Vilera; A. Consoli; Ignacio Esquivias
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Paper Abstract

Fully integrated semiconductor master-oscillator power-amplifiers (MOPA) with a tapered power amplifier are attractive sources for applications requiring high brightness. The geometrical design of the tapered amplifier is crucial to achieve the required power and beam quality. In this work we investigate by numerical simulation the role of the geometrical design in the beam quality and in the maximum achievable power. The simulations were performed with a Quasi-3D model which solves the complete steady-state semiconductor and thermal equations combined with a beam propagation method. The results indicate that large devices with wide taper angles produce higher power with better beam quality than smaller area designs, but at expenses of a higher injection current and lower conversion efficiency.

Paper Details

Date Published: 2 May 2014
PDF: 7 pages
Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 91342A (2 May 2014); doi: 10.1117/12.2052488
Show Author Affiliations
J. M. G. Tijero, Univ. Politécnica de Madrid (Spain)
L. Borruel, Univ. Politécnica de Madrid (Spain)
M. Vilera, Univ. Politécnica de Madrid (Spain)
A. Consoli, Univ. Politécnica de Madrid (Spain)
Ignacio Esquivias, Univ. Politécnica de Madrid (Spain)

Published in SPIE Proceedings Vol. 9134:
Semiconductor Lasers and Laser Dynamics VI
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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