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Proceedings Paper

Bifurcation diagram of an external-cavity semiconductor laser: experiment and theory
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Paper Abstract

We report experimental bifurcation diagrams (BDs) of an external-cavity semiconductor laser (ECSL). We have focused on the case of the ECSL biased just above threshold to moderate and subjected to feedback from a distant reflector and observed a sequence of bifurcations involving bifurcation cascade as well as intermittency between multiple coexisting attractors. More importantly, we reiterate: the results map out, for the first time to our knowledge, detailed BDs of the ECSL as a function of feedback strength for various external cavity lengths and currents, thus covering a significant portion of parameter space. We have grounded our discussion in extensive theoretical studies based on the Lang-Kobayashi equations and simulated BDs in accordance with our experimental results.

Paper Details

Date Published: 2 May 2014
PDF: 7 pages
Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 913425 (2 May 2014); doi: 10.1117/12.2052314
Show Author Affiliations
Byungchil Kim, Georgia Tech-Lorraine, CNRS (France)
Georgia Institute of Technology (United States)
Nianqiang Li, Southwest Jiaotong Univ. (China)
D. Choi, Georgia Tech-Lorraine, CNRS (France)
Georgia Institute of Technology (United States)
A. Locquet, Georgia Tech-Lorraine, CNRS (France)
Georgia Institute of Technology (United States)
D. S. Citrin, Georgia Tech-Lorraine, CNRS (France)
Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 9134:
Semiconductor Lasers and Laser Dynamics VI
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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