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Proceedings Paper

Development of a scatterometry reference standard
Author(s): Bernd Bodermann; Bernd Loechel; Frank Scholze; Gaoliang Dai; Jan Wernecke; Johannes Endres; Juergen Probst; Max Schoengen; Michael Krumrey; Poul-Erik Hansen; Victor Soltwisch
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Paper Abstract

Scatterometry is a common technique for dimensional characterisation of nanostructures in the semiconductor industry. Currently this technique is limited to relative measurements for process development and process control. Although the high sensitivity of scatterometry is well known, it is not yet applied for absolute measurements of critical dimensions (CD) and quality control due to the lack of traceability. Thus we aim to establish scatterometry as traceable and absolute metrological method for dimensional measurements. Suitable high quality calibrated scatterometry reference standard samples are currently developed as one important step to enable traceable absolute measurements in industrial applications. The reference standard materials will base either on Si or on Si3N4. A traceable calibration of these standards will be provided by applying and combining different scatterometric as well as imaging calibration methods. First Silicon test samples have been manufactured and characterised for this purpose. The etched Si gratings have periods down to 50 nm and contain areas of reduced density to enable AFM measurements for comparison. We present the current design and first characterisations of structure details and the grating quality based on AFM measurements, optical, EUV and X-Ray scatterometry as well as spectroscopic ellipsometry. Finally we discuss possible final designs and the aimed specifications of the standard samples to face the tough requirements for future technology nodes in lithography.

Paper Details

Date Published: 1 May 2014
PDF: 12 pages
Proc. SPIE 9132, Optical Micro- and Nanometrology V, 91320A (1 May 2014); doi: 10.1117/12.2052278
Show Author Affiliations
Bernd Bodermann, Physikalisch-Technische Bundesanstalt (Germany)
Bernd Loechel, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany)
Frank Scholze, Physikalisch-Technische Bundesanstalt (Germany)
Gaoliang Dai, Physikalisch-Technische Bundesanstalt (Germany)
Jan Wernecke, Physikalisch-Technische Bundesanstalt (Germany)
Johannes Endres, Physikalisch-Technische Bundesanstalt (Germany)
Juergen Probst, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany)
Max Schoengen, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (Germany)
Michael Krumrey, Physikalisch-Technische Bundesanstalt (Germany)
Poul-Erik Hansen, Danish Fundamental Metrology Ltd. (Denmark)
Victor Soltwisch, Physikalisch-Technische Bundesanstalt (Germany)


Published in SPIE Proceedings Vol. 9132:
Optical Micro- and Nanometrology V
Christophe Gorecki; Anand Krishna Asundi; Wolfgang Osten, Editor(s)

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