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Proceedings Paper

Characterization of single-photon avalanche photodiodes in CMOS 150nm technology
Author(s): Hesong Xu; Lucio Pancheri; Leo H. C. Braga; David Stoppa
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Paper Abstract

The characterization of two Single-Photon Avalanche Diodes (SPADs) structures fabricated in CMOS 150nm technology is reported in this paper. The structures are based on a pwell/n-iso junction and differ only for the presence of a polysilicon layer above the guard ring. Each structure is implemented in two different shapes (circular and square) and four sizes (5,10,15 and 20μm). Measurement results show that both average breakdown voltage and non-uniformity decrease with SPAD sizes. The statistical variation of Photon Detection Efficiency (PDE) and its dependence on device size are also reported and discussed. For all the considered device sizes, a PDE non-uniformity lower than 0.5% was measured.

Paper Details

Date Published: 15 May 2014
PDF: 6 pages
Proc. SPIE 9141, Optical Sensing and Detection III, 91410A (15 May 2014); doi: 10.1117/12.2052266
Show Author Affiliations
Hesong Xu, Fondazione Bruno Kessler (Italy)
Lucio Pancheri, Univ. degli Studi di Trento (Italy)
Leo H. C. Braga, Fondazione Bruno Kessler (Italy)
David Stoppa, Fondazione Bruno Kessler (Italy)

Published in SPIE Proceedings Vol. 9141:
Optical Sensing and Detection III
Francis Berghmans; Anna G. Mignani; Piet De Moor, Editor(s)

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