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Proceedings Paper

Carrier sign reversal in amorphous silicon ruthenium thin films deposited by co-sputtering
Author(s): Anran Guo; Jian He; Chong Wang; Wei Li; Yadong Jiang
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Paper Abstract

We report on the co-sputtering growth of amorphous silicon ruthenium (a-Si1-xRux) thin films, in which carrier sign reversal is observed by Hall measurement with increasing Ru concentration. High conductivity and suitable temperature coefficient of resistivity (TCR) are obtained, respectively. Raman spectroscopy reveals the degradation of amorphous network, which is caused by doped Ru atoms due to the different size and eletronegativity between Si and Ru atoms. The Hall effect anomaly will be related to the impurities and disordered structure.

Paper Details

Date Published: 16 December 2013
PDF: 5 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680D (16 December 2013); doi: 10.1117/12.2052223
Show Author Affiliations
Anran Guo, Univ. of Electronic Science and Technology of China (China)
Jian He, Univ. of Electronic Science and Technology of China (China)
Chong Wang, Univ. of Electronic Science and Technology of China (China)
Wei Li, Univ. of Electronic Science and Technology of China (China)
Yadong Jiang, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

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