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Proceedings Paper

The analytical approach to the multi-state lasing phenomenon in undoped and p-doped InAs/InGaAs semiconductor quantum dot lasers
Author(s): Vladimir V. Korenev; Artem V. Savelyev; Alexey E. Zhukov; Alexander V. Omelchenko; Mikhail V. Maximov
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Paper Abstract

We introduce an analytical approach to the multi-state lasing phenomenon in p-doped and undoped InAs/InGaAs quantum dot lasers which were studied both theoretically and experimentally. It is shown that the asymmetry in charge carrier distribution in quantum dots as well as hole-to-electron capture rate ratio jointly determine laser’s behavior in such a regime. If the ratio is lower than a certain critical value, the complete quenching of ground-state lasing takes place at sufficiently high injection currents; at higher values of the ratio, our model predicts saturation of the ground-state power. It was experimentally shown that the modulation p-doping of laser’s active region results in increase of output power emitted via the ground-state optical transitions of quantum dots and in enhancement of the injection currents range in which multi-state lasing takes place. The maximum temperature at which multi-state lasing exists was increased by about 50°C in the p-doped samples. These effects are qualitatively explained in the terms of the proposed model.

Paper Details

Date Published: 2 May 2014
PDF: 8 pages
Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 913406 (2 May 2014); doi: 10.1117/12.2051998
Show Author Affiliations
Vladimir V. Korenev, St. Petersburg Academic Univ. (Russian Federation)
Artem V. Savelyev, St. Petersburg Academic Univ. (Russian Federation)
St. Petersburg State Polytechnical Univ. (Russian Federation)
Alexey E. Zhukov, St. Petersburg Academic Univ. (Russian Federation)
St. Petersburg State Polytechnical Univ. (Russian Federation)
Ioffe Physical-Technical Institute (Russian Federation)
Alexander V. Omelchenko, St. Petersburg Academic Univ. (Russian Federation)
St. Petersburg State Polytechnical Univ. (Russian Federation)
Mikhail V. Maximov, St. Petersburg Academic Univ. (Russian Federation)
St. Petersburg State Polytechnical Univ. (Russian Federation)
Ioffe Physical-Technical Institute (Russian Federation)


Published in SPIE Proceedings Vol. 9134:
Semiconductor Lasers and Laser Dynamics VI
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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