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Proceedings Paper

Photo-voltage in InGaAs/GaAs heterostructures with one-dimensional nanostructures
Author(s): Marianna S. Kovalova; Serhiy V. Kondratenko; Colin S. Furrow; Vasyl P. Kunets; Morgan E. Ware; Gregory J. Salamo
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Paper Abstract

Materials with one-dimensional quantum structures are promising for their application in solar cells. The photo-voltage generation of these structures is caused by spatial separation of electron-hole pairs by a built-in electric field in the GaAs p-i-n junction. The InGaAs/GaAs sample shows a significantly higher photo-voltage in the spectral range of 1.25-1.37 eV, as compared to a reference GaAs p-n junction, due to interband transitions in the quantum wires (QWRs).

Paper Details

Date Published: 2 May 2014
PDF: 7 pages
Proc. SPIE 9126, Nanophotonics V, 91262H (2 May 2014); doi: 10.1117/12.2051881
Show Author Affiliations
Marianna S. Kovalova, National Taras Shevchenko Univ. of Kyiv (Ukraine)
Serhiy V. Kondratenko, National Taras Shevchenko Univ. of Kyiv (Ukraine)
Colin S. Furrow, Univ. of Arkansas (United States)
Vasyl P. Kunets, Univ. of Arkansas (United States)
Morgan E. Ware, Univ. of Arkansas (United States)
Gregory J. Salamo, Univ. of Arkansas (United States)


Published in SPIE Proceedings Vol. 9126:
Nanophotonics V
David L. Andrews; Jean-Michel Nunzi; Andreas Ostendorf, Editor(s)

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