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Proceedings Paper

Investigation of the slot mode enhancement of erbium-doped polymer silicon on insulator waveguide amplifiers
Author(s): Samuel Serna ; Weiwei Zhang; Yonggan Zhang; Meiling Zhang; Dingshan Gao; Daming Zhang; Eric Cassan
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Paper Abstract

Erbium-doped Polymer hybrid slot waveguide amplifier at λs=1530 nm with a 1480 nm pumping wavelength is investigated. Both, the waveguide structure parameters and the Er3+-doped polymer intrinsic spectroscopic parameters are swept to analyze the gain contribution sensitivities. Assuming moderate optical transmission losses of 10dB/cm, the predicted net gain typically varies from 0 to 10dB. Due to the excited state absorption (ESA) mechanism in the high intensity slot region, the signal gain is significantly suppressed for large pumping power, leading to the counterintuitive result that there is an optimum pump power value in the sub-100 mW range. The effect of the ion concentration and the ion-ion interaction is considered giving different adjusted parameters in every particular case.

Paper Details

Date Published: 2 May 2014
PDF: 8 pages
Proc. SPIE 9126, Nanophotonics V, 91262A (2 May 2014); doi: 10.1117/12.2051740
Show Author Affiliations
Samuel Serna , Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Lab. Charles Fabry, Institut d’Optique (France)
Weiwei Zhang, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud (France)
Yonggan Zhang, Huazhong Univ. of Science and Technology (China)
Meiling Zhang, Huazhong Univ. of Science and Technology (China)
Dingshan Gao, Huazhong Univ. of Science and Technology (China)
Daming Zhang, Jilin Univ. (China)
Eric Cassan, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud (France)


Published in SPIE Proceedings Vol. 9126:
Nanophotonics V
David L. Andrews; Jean-Michel Nunzi; Andreas Ostendorf, Editor(s)

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