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Proceedings Paper

Strains distribution in biaxial Ge/CdSe nanowire analyzed by a new finite element method based on boundary conditions
Author(s): Dong Wang; Chunrui Wang; Yao Zhang; Shasha Zhang; Xiaofeng Xu; Qinyu Yang
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Paper Abstract

A new finite element method based on boundary conditions is proposed here to obtain the complete strains distribution in Ge/CdSe biaxial nanowires. The results show that the strains in nanowire is essentially uniform along the nanowire axis, whereas turn to be complex in cross-section. Additionally, Raman spectrum of Ge subnanowire was calculated on base of those strain data. Raman frequency shifts in Ge subnanowire in Ge/CdSe biaxial nanowires is a good agreement with that of Raman spectrum, which confirms the validity of this model.

Paper Details

Date Published: 16 December 2013
PDF: 6 pages
Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 906813 (16 December 2013); doi: 10.1117/12.2051718
Show Author Affiliations
Dong Wang, Donghua Univ. (China)
Chunrui Wang, Donghua Univ. (China)
Yao Zhang, Donghua Univ. (China)
Shasha Zhang, Donghua Univ. (China)
Xiaofeng Xu, Donghua Univ. (China)
Qinyu Yang, Donghua Univ. (China)


Published in SPIE Proceedings Vol. 9068:
Eighth International Conference on Thin Film Physics and Applications
Junhao Chu; Chunrui Wang, Editor(s)

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