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Proceedings Paper

Nonlinear response of SiGe waveguides in the mid-infrared
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Paper Abstract

The linear and nonlinear optical response of SiGe waveguides in the mid-infrared are experimentally measured. By cutback measurements we find the linear losses to be less than 1.5dB/cm between 3μm and 5μm, with a record low loss of 0.5dB/cm at a wavelength of 4.75μm. By launching picosecond pulses between 3.25μm and 4.75μm into the waveguides and measuring both their self-phase modulation and nonlinear transmission we find that nonlinear losses can be significant in this wavelength range due to free-carrier absorption induced by multi-photon absorption. This should be considered when engineering SiGe photonic devices for nonlinear applications in the mid-IR.

Paper Details

Date Published: 1 May 2014
PDF: 7 pages
Proc. SPIE 9133, Silicon Photonics and Photonic Integrated Circuits IV, 91330M (1 May 2014); doi: 10.1117/12.2051689
Show Author Affiliations
L. Carletti, Ecole Centrale de Lyon (France)
P. Ma, The Australian National Univ. (Australia)
B. Luther-Davies, The Australian National Univ. (Australia)
D. Hudson, The Univ. of Sydney (Australia)
C. Monat, Ecole Centrale de Lyon (France)
S. Madden, The Australian National Univ. (Australia)
D. J. Moss, RMIT Univ. (Australia)
M. Brun, CEA-LETI (France)
S. Ortiz, CEA-LETI (France)
S. Nicoletti, CEA-LETI (France)
C. Grillet, Ecole Centrale de Lyon (France)


Published in SPIE Proceedings Vol. 9133:
Silicon Photonics and Photonic Integrated Circuits IV
Laurent Vivien; Seppo Honkanen; Lorenzo Pavesi; Stefano Pelli; Jung Hun Shin, Editor(s)

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