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Proceedings Paper

Raman spectroscopy of nanostructured silicon fabricated by metal-assisted chemical etching
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Paper Abstract

In this work, we present a detailed experimental Raman investigation of nanostructured silicon films prepared by metalassisted chemical etching with different nanocrystal sizes and structures. Interpretation of observed one and two-phonon Raman peaks are presented. First-order Raman peak has a small redshift and broadening. This phenomenon is analyzed in the framework of the phonon confinement model. Second-order Raman peaks were found to be shifted and broadened in comparison to those in the bulk silicon. The peak shift and broadening of two-phonon Raman scattering relates to phonon confinement and disorder. A broad Raman peak between 900-1100 cm-1 corresponds to superposition of three transverse optical phonons ~2TO (X), 2TO (W) and 2TO (L). Influence of excitation wavelength on intensity redistribution of two-phonon Raman scattering components (2TO) is demonstrated and preliminary theoretical explanation of this observation is presented.

Paper Details

Date Published: 1 May 2014
PDF: 7 pages
Proc. SPIE 9132, Optical Micro- and Nanometrology V, 913217 (1 May 2014); doi: 10.1117/12.2051489
Show Author Affiliations
Igor Iatsunskyi, Adam Mickiewicz Univ. (Poland)
Odessa I.I. Mechnikov National Univ. (Ukraine)
Stefan Jurga, Adam Mickiewicz Univ. (Poland)
Valentyn Smyntyna, Odessa I.I. Mechnikov National Univ. (Ukraine)
Mykolai Pavlenko, Odessa I.I. Mechnikov National Univ. (Ukraine)
Valeriy Myndrul, Odessa I.I. Mechnikov National Univ. (Ukraine)
Anastasia Zaleska, Odessa I.I. Mechnikov National Univ. (Ukraine)

Published in SPIE Proceedings Vol. 9132:
Optical Micro- and Nanometrology V
Christophe Gorecki; Anand Krishna Asundi; Wolfgang Osten, Editor(s)

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