Share Email Print
cover

Proceedings Paper

Modeling of PN interleaved phase shifters for high speed silicon modulators
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In this work, the modeling of phase shifters based in PN interleaved junctions is analyzed. Three different models based on different approximations are presented in details. Comparisons with previous published experimental data are presented, as well as a comparison and a discussion on the different models.

Paper Details

Date Published: 1 May 2014
PDF: 7 pages
Proc. SPIE 9133, Silicon Photonics and Photonic Integrated Circuits IV, 913312 (1 May 2014); doi: 10.1117/12.2051319
Show Author Affiliations
Diego Perez-Galacho, Institut d’Electronique Fondamentale, CNRS-Univ. Paris Sud 11 (France)
Delphine Marris-Morini, Institut d’Electronique Fondamentale, CNRS-Univ. Paris Sud 11 (France)
Eric Cassan, Institut d’Electronique Fondamentale, CNRS-Univ. Paris Sud 11 (France)
Laurent Vivien, Institut d’Electronique Fondamentale, CNRS-Univ. Paris Sud 11 (France)


Published in SPIE Proceedings Vol. 9133:
Silicon Photonics and Photonic Integrated Circuits IV
Laurent Vivien; Seppo Honkanen; Lorenzo Pavesi; Stefano Pelli; Jung Hun Shin, Editor(s)

© SPIE. Terms of Use
Back to Top